The billion-level silicon carbide MOSFET market is coming, are you ready?
When it comes to diodes, many semiconductor enthusiasts know that Schottky diodes, also known as hot carrier diodes, form Schottky barriers through metal and semiconductor contact (Schottky contact) to achieve rectification. Compared with ordinary PN junction diodes, the reverse recovery inertia of Schottky diodes is very low. Therefore, Schottky diodes are suitable for high-frequency rectification or high-speed switching. Silicon carbide (SiC) is the latest high-performance semiconductor material. SiC Schottky Diode (SiC Schottky Diode) has higher energy efficiency, higher power density, smaller size and higher reliability, and can Breaking the limits of silicon in the field of power electronics technology, becoming a new device for new energy and power electronics.
When it comes to diodes, many semiconductor enthusiasts know that Schottky diodes, also known as hot carrier diodes, form Schottky barriers through metal and semiconductor contact (Schottky contact) to achieve rectification. Compared with ordinary PN junction diodes, the reverse recovery inertia of Schottky diodes is very low. Therefore, Schottky diodes are suitable for high-frequency rectification or high-speed switching.
Silicon carbide (SiC) is the latest high-performance semiconductor material. SiC Schottky Diode (SiC Schottky Diode) has higher energy efficiency, higher power density, smaller size and higher reliability, and can Breaking the limits of silicon in the field of power electronics technology, becoming a new device for new energy and power electronics.
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